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? 2002 microchip technology inc. ds21706a-page 1 m mcp73828 features ? linear charge management controller for single lithium-ion cells ? high accuracy preset voltage regulation: + 1% (max) ? two preset voltage regulation options: - 4.1v - mcp73828-4.1 - 4.2v - mcp73828-4.2 ? programmable charge current ? automatic cell preconditioning of deeply depleted cells, minimizing heat dissipation during initial charge cycle ? charge complete output cd10 for led or microcontroller interface ? continuous temperature monitoring ? automatic power-down when input power removed ? temperature range: -20c to +85c ? packaging: 8-pin msop applications ? single cell lithium-ion battery chargers ? personal data assistants ? cellular telephones ? hand held instruments ? cradle chargers ? digital cameras typical application circuit description the mcp73828 is a linear charge management con- troller for use in space-limited, cost sensitive applica- tions. the mcp73828 combines high accuracy constant voltage, controlled current regulation, cell pre- conditioning, cell temperature monitoring, and charge complete indication in a space saving 8-pin msop package. the mcp73828 provides a stand-alone charge management solution. the mcp73828 charges the battery in three phases: preconditioning, controlled current, and constant volt- age. if the battery voltage is below the internal low-volt- age threshold, the battery is preconditioned with a foldback current. the preconditioning phase protects the lithium-ion cell and minimizes heat dissipation. following the preconditioning phase, the mcp73828 enters the controlled current phase. the mcp73828 allows for design flexibility with a programmable charge current set by an external sense resistor. the charge current is ramped up, based on the cell voltage, from the foldback current to the peak charge current estab- lished by the sense resistor. this phase is maintained until the battery reaches the charge-regulation voltage. then, the mcp73828 enters the final phase, constant voltage. the accuracy of the voltage regulation is better than 1% over the entire operating temperature range and supply voltage range. the mcp73828-4.1 is preset to a regulation voltage of 4.1v, while the mcp73828- 4.2 is preset to 4.2v. the charge complete output, cd10, indicates when the charge current has dimin- ished to approximately 10% of the peak charge current established by the sense resistor. the mcp73828 operates with an input voltage range from 4.5v to 5.5v. the mcp73828 is fully specified over the ambient temperature range of -20c to +85c. package type + - 12 5 7 8 mcp73828 6 3 4 thermistor gnd v drv v sns v in v bat shdn 10 f 100 k ? 100 m ? v in lithium-ion cell nds8434 ma2q705 5v 10 f single therm cd10 332 ? 500 ma lithium-ion battery charger msop v drv v sns v in v bat shdn 1 2 3 4 8 7 mcp73828 5 6 therm cd10 gnd single cell lithium-ion charge management controller with charge complete indicator and temperature monitor
mcp73828 ds21706a-page 2 ? 2002 microchip technology inc. functional block diagram voltage control amplifier shutdown, reference generator v ref (1.2v) + ? v ref v in charge current control amplifier + ? v ref shdn v bat gnd v drv + ? charge current amplifier v in v sns 1.1 k ? 12 k ? 500 k ? 75 k ? 75 k ? 352.5 k ? (note 1) charge current foldback amplifier + ? 37.5 k ? 112.5 k ? v in 0.3v clamp note 1 : value = 340.5k ? for mcp73828-4.1 value = 352.5k ? for mcp73828-4.2 + - charge complete comparator cd10 + ? charge complete amplifier 156 k ? 100 k ? 140 mv + - thermistor voltage comparators + - 839 mv 11 3 mv v ref therm v in 67 k ? 130 k ? 5k ? 21 k ? 140 mv i therm 25 ma
? 2002 microchip technology inc. ds21706a-page 3 mcp73828 1.0 electrical characteristics 1.1 maximum r atings* v in ...................................................................... -0.3v to 6.0v all inputs and outputs w.r.t. gnd ................-0.3 to (v in +0.3)v current at cd10 pin ................................................ +/-30 ma current at v drv .......................................................... +/-1 ma maximum junction temperature, t j .............................. 150c storage temperature .....................................-65c to +150c esd protection on all pins .................................................. 4kv *notice: stresses above those listed under ?maximum rat- ings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. expo- sure to maximum rating conditions for extended periods may affect device reliability. pin function table dc characteristics: mcp73828-4.1, mcp73828-4.2 pin name description 1 shdn logic shutdown 2 gnd battery management 0v reference 3 therm cell temperature monitor 4 cd10 charge complete output 5v bat cell voltage monitor input 6v drv drive output 7v sns charge current sense input 8v in battery management input supply unless otherwise specified, all limits apply for v in = [v reg (typ)+1v], r sense = 500 m ?, t a = -20c to +85c. typical values are at +25c. refer to figure 1-1 for test circuit. parameter sym min typ max units conditions supply voltage v in 4.5 ? 5.5 v supply current i in ? ? 0.7 265 15 560 a shutdown, v shdn = 0v constant voltage mode voltage regulation (constant voltage mode) regulated output voltage v reg 4.059 4.158 4.1 4.2 4.141 4.242 v v mcp73828-4.1 only mcp73828-4.2 only line regulation ? v bat -10 ? 10 mv v in = 4.5v to 5.5v, i out = 75 ma load regulation ? v bat -1 + 0.2 +1 mv i out =10 ma to 75 ma output reverse leakage current i lk ?10? av in =floating, v bat =v reg external mosfet gate drive gate drive current i drv ? 0.08 ? ? 1 ? ma ma sink, cv mode source, cv mode gate drive minimum voltage v drv ?1.6? v current regulation (controlled current mode) current sense gain a cs ?100? db ? (v sns -v drv ) / ? v bat current limit threshold v cs 40 53 75 mv (v in -v sns ) at i out foldback current scale factor k ? 0.43 ? a/a charge complete indicator - cd10 current threshold i th ?10?%i out(peak) low output voltage v ol ??400 mvi sink = 10 ma leakage current i lk ?? 1 ai sink =0 ma, v cd10 =5.5v shutdown input - shdn input high voltage level v ih 40 ? ? %v in input low voltage level v il ??25 %v in input leakage current i lk ?? 1 av shdn = 0v to 5.5v
mcp73828 ds21706a-page 4 ? 2002 microchip technology inc. temperature specifications figure 1-1: mcp73828 test circuit. temperature monitor - therm thermistor bias current i therm 22.5 25.0 27.5 a therm threshold voltages v th ? ? 113 839 ? ? mv lower threshold voltage upper threshold voltage unless otherwise specified, all limits apply for v in = [v reg (typ)+1v], r sense = 500 m ?, t a = -20c to +85c. typical values are at +25c. refer to figure 1-1 for test circuit. parameter sym min typ max units conditions unless otherwise specified, all limits apply for v in = 4.5v-5.5v parameters sym min typ max units conditions temperature ranges specified temperature range t a -20 ? +85 c operating temperature range t a -40 ? +125 c storage temperature range t a -65 ? +150 c package thermal resistance thermal resistance, 8l-msop ja ? 206 ? c/w single layer semi g42-88 standard board, natural convec- tion gnd v drv v sns v in v bat shdn 12 5 7 8 6 100 k ? r sense nds8434 mcp73828 cd10 100 k ? 4 3 therm 10 k ? 22 f 22 f v in = 5.1v i out v out (mcp73828-4.1) v in = 5.2v (mcp73828-4.2)
? 2002 microchip technology inc. ds21706a-page 5 mcp73828 2.0 typical performance characteristics note: unless otherwise indicated, i out = 10 ma, constant voltage mode, t a =25c. refer to figure 1-1 for test circuit. figure 2-1: output voltage vs. output current (mcp73828-4.2). figure 2-2: output voltage vs. input voltage (mcp73828-4.2). figure 2-3: output voltage vs. input voltage (mcp73828-4.2). figure 2-4: supply current vs. output current. figure 2-5: supply current vs. input voltage. figure 2-6: supply current vs. input voltage. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 4.195 4.196 4.197 4.198 4.199 4.200 4.201 4.202 4.203 4.204 4.205 0 200 400 600 800 1000 output current (ma) output voltage (v) 4.195 4.196 4.197 4.198 4.199 4.200 4.201 4.202 4.203 4.204 4.205 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 input voltage (v) output voltage (v) i out = 1000 ma 4.195 4.196 4.197 4.198 4.199 4.200 4.201 4.202 4.203 4.204 4.205 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 input voltage (v) output voltage (v) i out = 10 ma 200 225 250 275 300 325 350 0 200 400 600 800 1000 output current (ma) supply current ( a) 200 225 250 275 300 325 350 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 input voltage (v) supply current ( a) i out = 1000 ma 200 225 250 275 300 325 350 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 input voltage (v) supply current ( a) i out = 10 ma
mcp73828 ds21706a-page 6 ? 2002 microchip technology inc. note: unless otherwise indicated, i out = 10 ma, constant voltage mode, t a =25c. refer to figure 1-1 for test circuit. figure 2-7: output reverse leakage current vs. output voltage. figure 2-8: output reverse leakage current vs. output voltage. figure 2-9: current limit foldback. figure 2-10: supply current vs. temperature. figure 2-11: output voltage vs. temperature (mcp73828-4.2). figure 2-12: power-up / power-down. 0 2 4 6 8 10 12 14 16 2.0 2.5 3.0 3.5 4.0 4.5 output voltage (v) ouput reverse leakage current ( a) 85 o c 25 o c -20 o c v in = floating v shdn = v out 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 2.5 3.0 3.5 4.0 4.5 output voltage (v) output reverse leakage current ( a) 85 o c 25 o c - 20 o c v in = floating v shdn = gnd 0.000 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 0 20406080100120 output current (ma) output voltage (v) 200 225 250 275 300 325 350 -20-100 1020304050607080 temperature ( o c) supply current ( a) 4.190 4.192 4.194 4.196 4.198 4.200 4.202 4.204 4.206 -20-10 0 1020304050607080 temperature ( o c) output voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 012345678910 input voltage (v) output voltage (v) power up power down 4 3 2 1 0
? 2002 microchip technology inc. ds21706a-page 7 mcp73828 note: unless otherwise indicated, i out = 10 ma, constant voltage mode, t a =25c. refer to figure 1-1 for test circuit. figure 2-13: line transient response. figure 2-14: line transient response. figure 2-15: load transient response. figure 2-16: load transient response.
mcp73828 ds21706a-page 8 ? 2002 microchip technology inc. 3.0 pin description the descriptions of the pins are listed in table 3-1. table 3-1: pin function table. 3.1 logic shutdown ( shdn ) input to force charge termination, initiate charge, or ini- tiate recharge. 3.2 battery management 0v reference (gnd) connect to negative terminal of battery. 3.3 cell temperature monitor (therm) charging is inhibited when the input is outside the upper and lower threshold limits. connection of a 10 k ? resistor between therm and gnd disables the function when cell temperature monitoring is not required. 3.4 charge complete output (cd10) open-drain drive for connection to an led for charge complete indication. alternatively, a pull-up resistor can be applied for interfacing to a microcontroller. a low impedance state indicates charging. a high impedance indicates that the charge current has diminished below 10% of the peak charge current. 3.5 cell voltage monitor input (v bat ) voltage sense input. connect to positive terminal of battery. bypass to gnd with a minimum of 10 f to ensure loop stability when the battery is disconnected. a precision internal resistor divider regulates the final voltage on this pin to v reg . 3.6 drive output (v drv ) direct output drive of an external p-channel mosfet pass transistor for current and voltage regulation. 3.7 charge current sense input v sns ) charge current is sensed via the voltage developed across an external precision sense resistor. the sense resistor must be placed between the supply voltage (v in ) and the source of the external pass transistor. a 50 m ? sense resistor produces a fast charge current of 1a, typically. 3.8 battery management input supply (v in ) a supply voltage of 4.5v to 5.5v is recommended. bypass to gnd with a minimum of 10 f. pin name description 1 shdn logic shutdown 2 gnd battery management 0v reference 3 therm cell temperature monitor 4 cd10 charge complete output 5v bat cell voltage monitor input 6v drv drive output 7v sns charge current sense input 8v in battery management input supply
? 2002 microchip technology inc. ds21706a-page 9 mcp73828 4.0 device overview the mcp73828 is a linear charge management con- troller. refer to the functional block diagram on page 2 and the typical application circuit, figure 6-1. 4.1 charge qualification and preconditioning upon insertion of a battery or application of an external supply, the mcp73828 automatically performs a series of safety checks to qualify the charge. the shdn pin must be above the logic high level, and the cell temper- ature monitor must be within the upper and lower threshold limits. the qualification parameters are con- tinuously monitored. deviation beyond the limits, auto- matically suspends the charge cycle. after the qualification parameters have been met, the mcp73828 initiates a charge cycle. the charge com- plete output, cd10, is pulled low throughout the pre- conditioning and controlled current phases (see table 5-1 for charge complete outputs). if the cell volt- age is below the preconditioning threshold, 2.4v typi- cally, the mcp73828 preconditions the cell with a scaled back current. the preconditioning current is set to approximately 43% of the fast charge peak current. the preconditioning safely replenishes deeply depleted cells and minimizes heat dissipation in the external pass transistor during the initial charge cycle. 4.2 controlled current regulation - fast charge preconditioning ends and fast charging begins when the cell voltage exceeds the preconditioning threshold. fast charge utilizes a foldback current scheme based on the voltage at the v sns input developed by the drop across an external sense resistor, r sense , and the out- put voltage, v bat . fast charge continues until the cell voltage reaches the regulation voltage, v reg . 4.3 constant voltage regulation when the cell voltage reaches the regulation voltage, v reg , constant voltage regulation begins. the mcp73828 monitors the cell voltage at the v out pin. this input is tied directly to the positive terminal of the battery. the mcp73828 is offered in two fixed-voltage versions for battery packs with either coke or graphite anodes: 4.1v (mcp73828-4.1) and 4.2v (mcp73828-4.2). 4.4 charge cycle completion the charge cycle can be terminated by a host micro- controller when the charge current has diminished below approximately 10% of the peak output voltage level. the charge complete output will go to a high impedance state signaling when the charge can be ter- minated. the charge is terminated by pulling the shut- down pin, shdn , to a logic low level.
mcp73828 ds21706a-page 10 ? 2002 microchip technology inc. 5.0 detailed description refer to the typical application circuit, figure 6-1. 5.1 analog circuitry 5.1.1 cell temperature monitor (therm) the cell temperature monitor, therm, input is used to inhibit charging when the battery temperature exceeds a predetermined temperature range. this temperature range is programmed externally with either a single thermistor or a resistor/thermistor network. an exam- ple of this type of network is illustrated in figure 6-1. the mcp73828 internally generates a current source out of the therm pin (shown in the functional block diagram). the nominal value of the current source (i therm ) is 25 a. this current flows through the ther- mistor network to ground. the factory programmed voltage range of the therm input (v th ) is 113 mv (typ) to 839 mv (typ). dependent on the type of ther- mistor used and the resistive network, the temperature trip points can be controlled. if the therm pin is lower that 113 mv or higher than 839 mv the device will shut- down operation. this condition can be corrected by bringing the therm pin back between these threshold voltages. as an application example, if a 10 k ? ntc thermistor with a sensitivity index (b) of 3982 is connected from therm to ground, the operational temperature range is from ?0.5c to 44.2c. see section 6.1.1.6 for more details concerning using the resistive network. alternatively, a positive temperature coefficient, ptc, thermistor can be utilized. connect the thermistor from the therm input to gnd. if temperature monitoring is not required, replace the thermistor with a standard 10 k ? resistor. 5.1.2 cell voltage monitor input (v bat ) the mcp73828 monitors the cell voltage at the v bat pin. this input is tied directly to the positive terminal of the battery. the mcp73828 is offered in two fixed-volt- age versions for single cells with either coke or graphite anodes: 4.1v (mcp73828-4.1) and 4.2v (mcp73828-4.2). 5.1.3 gate drive output (v drv ) the mcp73828 controls the gate drive to an external p-channel mosfet, q1. the p-channel mosfet is controlled in the linear region, regulating current and voltage supplied to the cell. the drive output is auto- matically turned off when the input supply falls below the voltage sensed on the v bat input. 5.1.4 current sense input (v sns ) fast charge current regulation is maintained by the voltage drop developed across an external sense resis- tor, r sense , applied to the v sns input pin. the follow- ing formula calculates the value for r sense : where: v cs is the current limit threshold. i out is the desired peak fast charge current in amps. the preconditioning current is scaled to approximately 43% of i out . 5.1.5 supply voltage (v in ) the v in input is the input supply to the mcp73828. the mcp73828 automatically enters a power-down mode if the voltage on the v in input falls below the voltage on the v bat pin. this feature prevents draining the battery pack when the v in supply is not present. 5.2 digital circuitry 5.2.1 shutdown input (shdn ) the shutdown input pin, shdn , can be used to termi- nate a charge anytime during the charge cycle, initiate a charge cycle, or initiate a recharge cycle. applying a logic high input signal to the shdn pin, or tying it to the input source, enables the device. apply- ing a logic low input signal disables the device and ter- minates a charge cycle. in shutdown mode, the device?s supply current is reduced to 0.7 a, typically. 5.2.2 charge complete output (cd10) a charge complete indicator, cd10, provides informa- tion on the state of charge. the open-drain output can be used to illuminate an external led. optionally, a pull-up resistor can be used on the output for commu- nication with a microcontroller. table 5-1 summarizes the state of this output during a charge cycle. table 5-1: charge complete output. charge cycle state mode qualification off preconditioning on controlled current fast charge on constant voltage on charge complete off temperature monitor invalid off disabled - sleep mode off battery disconnected off r sense v cs i out ----------- - =
? 2002 microchip technology inc. ds21706a-page 11 mcp73828 6.0 applications the mcp73828 is designed to operate in conjunction with a host microcontroller or in stand-alone applica- tions. the mcp73828 provides the preferred charge algorithm for lithium-ion cells, controlled current fol- lowed by constant voltage. figure 6-1 depicts a typical stand-alone application circuit and figure 6-2 depicts the accompanying charge profile. figure 6-1: typical application circuit. figure 6-2: typical charge profile. voltage regulated wall cube pack + pack- + - r sense gnd v drv v sns v in v bat shdn 1 2 3 4 8 7 mcp73828 5 6 therm cd10 r s temp r p single cell lithium-ion 22 k ? 10 f 100 k ? ma2q705 100 m ? nds8434 10 f battery pack q1 i out 332 ? r thermistor regulation voltage (v reg ) regulation current (i out(peak) ) transition threshold precondition current charge current charge voltage preconditioning phase controlled current phase constant voltage phase cd10 - charge complete output 0v 5v charge complete current (10% i out(peak) )
mcp73828 ds21706a-page 12 ? 2002 microchip technology inc. 6.1 application circuit design due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the external p-chan- nel pass transistor, q1, and the ambient cooling air. the worst-case situation is when the output is shorted. in this situation, the p-channel pass transistor has to dissipate the maximum power. a trade-off must be made between the charge current, cost and thermal requirements of the charger. 6.1.1 component selection selection of the external components in figure 6-1 is crucial to the integrity and reliability of the charging sys- tem. the following discussion is intended as a guide for the component selection process. 6.1.1.1 sense resistor the preferred fast charge current for lithium-ion cells is at the 1c rate with an absolute maximum current at the 2c rate. for example, a 500 mah battery pack has a preferred fast charge current of 500 ma. charging at this rate provides the shortest charge cycle times with- out degradation to the battery pack performance or life. the current sense resistor, r sense , is calculated by: where: v cs is the current limit threshold voltage i out is the desired fast charge current for the 500 mah battery pack example, a standard value 100 m ? , 1% resistor provides a typical peak fast charge current of 530 ma and a maximum peak fast charge current of 758 ma. worst case power dissipa- tion in the sense resistor is: a panasonic erj-l1wkf100u 100 m ? , 1%, 1 w resistor is more than sufficient for this application. a larger value sense resistor will decrease the peak fast charge current and power dissipation in both the sense resistor and external pass transistor, but will increase charge cycle times. design trade-offs must be considered to minimize space while maintaining the desired performance. 6.1.1.2 external pass transistor the external p-channel mosfet is determined by the gate to source threshold voltage, input voltage, output voltage, and peak fast charge current. the selected p- channel mosfet must satisfy the thermal and electri- cal design requirements. thermal considerations the worst case power dissipation in the external pass transistor occurs when the input voltage is at the maxi- mum and the output is shorted. in this case, the power dissipation is: where: v inmax is the maximum input voltage i out is the maximum peak fast charge current k is the foldback current scale factor power dissipation with a 5v, +/-10% input voltage source, 100 m ? , 1% sense resistor, and a scale factor of 0.43 is: utilizing a fairchild nds8434 or an international recti- fier irf7404 mounted on a 1in 2 pad of 2 oz. copper, the junction temperature rise is 90c, approximately. this would allow for a maximum operating ambient temper- ature of 60c. by increasing the size of the copper pad, a higher ambient temperature can be realized or a lower value sense resistor could be utilized. alternatively, different package options can be utilized for more or less power dissipation. again, design trade- offs should be considered to minimize size while main- taining the desired performance. electrical considerations the gate to source threshold voltage and r dson of the external p-channel mosfet must be considered in the design phase. the worst case, v gs provided by the controller occurs when the input voltage is at the minimum and the charge current is at the maximum. the worst case, v gs is: where: v drvmax is the maximum sink voltage at the v drv output r sense v cs i out ----------- - = powerdissipation 100m ? 758ma 2 57.5mw == powerdissipation v inmax i out k = powerdissipation 5.5v 758ma 0.43 1.8w == v gs v drvmax v inmin i out r sense ) ? ( ? =
? 2002 microchip technology inc. ds21706a-page 13 mcp73828 v inmin is the minimum input voltage source i out is the maximum peak fast charge current r sense is the sense resistor worst case, v gs with a 5v, +/-10% input voltage source, 100 m ? , 1% sense resistor, and a maximum sink voltage of 1.6v is: at this worst case v gs , the r dson of the mosfet must be low enough as to not impede the performance of the charging system. the maximum allowable r dson at the worst case v gs is: the fairchild nds8434 and international rectifier irf7404 both satisfy these requirements. 6.1.1.3 external capacitors the mcp73828 is stable with or without a battery load. in order to maintain good ac stability in the constant voltage mode, a minimum capacitance of 10 f is rec- ommended to bypass the v bat pin to gnd. this capac- itance provides compensation when there is no battery load. in addition, the battery and interconnections appear inductive at high frequencies. these elements are in the control feedback loop during constant voltage mode. therefore, the bypass capacitance may be nec- essary to compensate for the inductive nature of the battery pack. virtually any good quality output filter capacitor can be used, independent of the capacitor?s minimum esr (effective series resistance) value. the actual value of the capacitor and its associated esr depends on the forward trans conductance, g m , and capacitance of the external pass transistor. a 10 f tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for up to a 1 a output current. 6.1.1.4 reverse blocking protection the optional reverse blocking protection diode depicted in figure 6-1 provides protection from a faulted or shorted input or from a reversed polarity input source. without the protection diode, a faulted or shorted input would discharge the battery pack through the body diode of the external pass transistor. if a reverse protection diode is incorporated in the design, it should be chosen to handle the peak fast charge current continuously at the maximum ambient temperature. in addition, the reverse leakage current of the diode should be kept as small as possible. 6.1.1.5 shutdown interface in the stand-alone configuration, the shutdown pin is generally tied to the input voltage. the mcp73828 will automatically enter a low power mode when the input voltage is less than the output voltage reducing the bat- tery drain current to 10 a, typically. by connecting the shutdown pin as depicted in figure 6-1, the battery drain current may be further reduced. in this application, the battery drain current becomes a function of the reverse leakage current of the reverse protection diode. 6.1.1.6 cell temperature monitor as discussed in section 5.1.1, the mcp73828 can monitor a temperature range for ?0.5c to 44.2c. this temperature range can be expanded or shifted by plac- ing fixed value resistors in series/parallel combinations with the thermistor (see figure 6-1). given that the nominal output current of the therm pin is 25 a, the resistor values must satisfy the following equations: where: r s is the fixed series resistance r p is the fixed parallel resistance r thermistor-h is the ntc thermistor resistance at the upper temperature of interest r thermistor-c is the ntc thermistor resistance at the lower temperature of interest. for example, by utilizing a 931 ? resistor in series with the typical ntc thermistor described previously, the monitored temperature window will shift to 0c to +50c, typically. again, with the same thermistor, a 1k ? series resistor and a 140 k ? parallel resistor will produce a monitored window of -5c to +50c, typi- cally. v gs 1.6v 4.5v 758ma 99m ? ? () ? 2.8 ? v == r dson v inmin i peak r sense ? v batmax ? i out --------------------------------------------------------------------------------------------- - = r dson 4.5v 758ma 99m ? ? 4.242v ? 758ma -------------------------------------------------------------------------------- 242m ? == r s r p r thermistor h ? r p r thermistor h ? + ------------------------------------------------------- - + 4520 ? typ () = r s r p r thermistor c ? r p r thermistor c ? + ------------------------------------------------------- - + 33560 ? typ () =
mcp73828 ds21706a-page 14 ? 2002 microchip technology inc. 6.1.1.7 charge complete interface the charge complete indicator, cd10, can be utilized to illuminate an led when the mcp73828 is charging the battery. when the mcp73828 is in constant voltage mode and the charge current has diminished below 10% of i out(peak) , the cd10 pin will transition to a high impedance state. a current limit resistor should be used in series with the led to establish a nominal led bias current of 10 ma. the maximum allowable sink current of the cd10 pin is 30 ma. 6.2 pcb layout issues for optimum voltage regulation, place the battery pack as close as possible to the device?s v out and gnd pins. it is recommended to minimize voltage drops along the high current carrying pcb traces. if the pcb layout is used as a heatsink, adding many vias around the external pass transistor can help con- duct more heat to the back-plane of the pcb, thus reducing the maximum junction temperature.
? 2002 microchip technology inc. ds21706a-page 15 mcp73828 7.0 packaging information 7.1 package marking information 8-lead msop example: xxxxxx ywwnnn 738281 ywwnnn legend: xx...x part number code + temperature range + voltage (two letter code)* y year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceab ility code note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for cus- tomer specific information. * standard otp marking consists of microchip part number, year code, week code, and traceability code. part number code mcp73828-4.1vua 738281 mcp73828-4.2vua 738282
mcp73828 ds21706a-page 16 ? 2002 microchip technology inc. 8-lead plastic micro small outline package (msop) d l c dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not .037 .035 f footprint (reference) exceed. 010? (0.254mm) per side. notes: drawing no. c04-111 *controlling parameter mold draft angle top mold draft angle bottom foot angle lead width lead thickness c b 7 7 .004 .010 0 .006 .012 (f) dimension limits overall height molded package thickness molded package width overall length foot length standoff overall width number of pins pitch a l e1 d a1 e a2 .016 .114 .114 .022 .118 .118 .002 .030 .193 .034 min p n units .026 nom 8 inches 1.00 0.95 0.90 .039 0.15 0.30 .008 .016 6 0.10 0.25 0 7 7 0.20 0.40 6 millimeters* 0.65 0.86 3.00 3.00 0.55 4.90 .044 .122 .028 .122 .038 .006 0.40 2.90 2.90 0.05 0.76 min max nom 1.18 0.70 3.10 3.10 0.15 0.97 max 8 e1 e b n 1 2 significant characteristic .184 .200 4.67 .5.08
? 2002 microchip technology inc. ds21706a-page 17 mcp73828 systems information and upgrade hot line the systems information and upgrade line provides system users a listing of the latest versions of all of microchip's development systems software products. plus, this line provides information on how customers can receive any currently available upgrade kits.the hot line numbers are: 1-800-755-2345 for u.s. and most of canada, and 1-480-792-7302 for the rest of the world. on-line support microchip provides on-line support on the microchip world wide web (www) site. the web site is used by microchip as a means to make files and information easily available to customers. to view the site, the user must have access to the internet and a web browser, such as netscape or microsoft explorer. files are also available for ftp download from our ftp site. connecting to the microchip internet web site the microchip web site is available by using your favorite internet browser to attach to: www.microchip.com the file transfer site is available by using an ftp ser- vice to connect to: ftp://ftp.microchip.com the web site and file transfer site provide a variety of services. users may download files for the latest development tools, data sheets, application notes, user's guides, articles and sample programs. a vari- ety of microchip specific business information is also available, including listings of microchip sales offices, distributors and factory representatives. other data available for consideration is: ? latest microchip press releases ? technical support section with frequently asked questions ? design tips ? device errata ? job postings ? microchip consultant program member listing ? links to other useful web sites related to microchip products ? conferences for products, development systems, technical information and more ? listing of seminars and events 013001
mcp73828 ds21706a-page 18 ? 2002 microchip technology inc. reader response it is our intention to provide you with the best documentation possible to ensure successful use of your microchip prod- uct. if you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please fax your comments to the technical publications manager at (480) 792-4150. please list the following information, and use this outline to provide us with your comments about this data sheet. 1. what are the best features of this document? 2. how does this document meet your hardware and software development needs? 3. do you find the organization of this data sheet easy to follow? if not, why? 4. what additions to the data sheet do you think would enhance the structure and subject? 5. what deletions from the data sheet could be made without affecting the overall usefulness? 6. is there any incorrect or misleading information (what and where)? 7. how would you improve this document? 8. how would you improve our software, systems, and silicon products? to : technical publications manager re: reader response total pages sent from: name company address city / state / zip / country telephone: (_______) _________ - _________ application (optional): would you like a reply? y n device: literature number: questions: fax: (______) _________ - _________ ds21706a mcp73828
? 2002 microchip technology inc. ds21706a-page19 mcp73828 product identification system to order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. sales and support data sheets products supported by a preliminary data sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. to determine if an errata sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip corporate literature center u.s. fax: (480) 792-7277 3. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products. part no. -x.x xx package output vo lta ge device device: mcp73828: linear charge management controller output voltage: 4.1 = 4.1v 4.2 = 4.2v temperature range: v = -20c to +85c package: ua = plastic micro small outline (msop), 8-lead examples: a) mcp73828-4.1vua: linear charge manage- ment controller, 4.1v b) mcp73828-4.2vua: linear charge manage- ment controller, 4.2v c) mcp73828-4.2vuatr: linear charge man- agement controller, 4.2v, in tape and reel x temperature range
mcp73828 ds21706a-page 20 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21706a-page21 mcp73828 notes:
mcp73828 ds21706a-page 22 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21706a - page 23 information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warranty is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchip?s products as critical com- ponents in life support systems is not authorized except with express written approval by microchip. no licenses are con- veyed, implicitly or otherwise, under any intellectual property rights. trademarks the microchip name and logo, the microchip logo, filterlab, k ee l oq , mplab, pic, picmicro, picmaster, picstart, pro mate, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. dspic, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, microid, microport, migratable memory, mpasm, mplib, mplink, mpsim, mxdev, picc, picdem, picdem.net, rfpic, select mode and total endurance are trademarks of microchip technology incorporated in the u.s.a. serialized quick term programming (sqtp) is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2002, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. microchip received qs-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona in july 1999. the company?s quality system processes and procedures are qs-9000 compliant for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms and microperipheral products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001 certified.
ds21706a-page 24 ? 2002 microchip technology inc. m americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: 480-792-7627 web address: http://www.microchip.com rocky mountain 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7966 fax: 480-792-7456 atlanta 500 sugar mill road, suite 200b atlanta, ga 30350 tel: 770-640-0034 fax: 770-640-0307 boston 2 lan drive, suite 120 westford, ma 01886 tel: 978-692-3848 fax: 978-692-3821 chicago 333 pierce road, suite 180 itasca, il 60143 tel: 630-285-0071 fax: 630-285-0075 dallas 4570 westgrove drive, suite 160 addison, tx 75001 tel: 972-818-7423 fax: 972-818-2924 detroit tri-atria office building 32255 northwestern highway, suite 190 farmington hills, mi 48334 tel: 248-538-2250 fax: 248-538-2260 kokomo 2767 s. albright road kokomo, indiana 46902 tel: 765-864-8360 fax: 765-864-8387 los angeles 18201 von karman, suite 1090 irvine, ca 92612 tel: 949-263-1888 fax: 949-263-1338 new york 150 motor parkway, suite 202 hauppauge, ny 11788 tel: 631-273-5305 fax: 631-273-5335 san jose microchip technology inc. 2107 north first street, suite 590 san jose, ca 95131 tel: 408-436-7950 fax: 408-436-7955 toronto 6285 northam drive, suite 108 mississauga, ontario l4v 1x5, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific australia microchip technology australia pty ltd suite 22, 41 rawson street epping 2121, nsw australia tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing microchip technology consulting (shanghai) co., ltd., beijing liaison office unit 915 bei hai wan tai bldg. no. 6 chaoyangmen beidajie beijing, 100027, no. china tel: 86-10-85282100 fax: 86-10-85282104 china - chengdu microchip technology consulting (shanghai) co., ltd., chengdu liaison office rm. 2401, 24th floor, ming xing financial tower no. 88 tidu street chengdu 610016, china tel: 86-28-6766200 fax: 86-28-6766599 china - fuzhou microchip technology consulting (shanghai) co., ltd., fuzhou liaison office unit 28f, world trade plaza no. 71 wusi road fuzhou 350001, china tel: 86-591-7503506 fax: 86-591-7503521 china - shanghai microchip technology consulting (shanghai) co., ltd. room 701, bldg. b far east international plaza no. 317 xian xia road shanghai, 200051 tel: 86-21-6275-5700 fax: 86-21-6275-5060 china - shenzhen microchip technology consulting (shanghai) co., ltd., shenzhen liaison office rm. 1315, 13/f, shenzhen kerry centre, renminnan lu shenzhen 518001, china tel: 86-755-2350361 fax: 86-755-2366086 hong kong microchip technology hongkong ltd. unit 901-6, tower 2, metroplaza 223 hing fong road kwai fong, n.t., hong kong tel: 852-2401-1200 fax: 852-2401-3431 india microchip technology inc. india liaison office divyasree chambers 1 floor, wing a (a3/a4) no. 11, o?shaugnessey road bangalore, 560 025, india tel: 91-80-2290061 fax: 91-80-2290062 japan microchip technology japan k.k. benex s-1 6f 3-18-20, shinyokohama kohoku-ku, yokohama-shi kanagawa, 222-0033, japan tel: 81-45-471- 6166 fax: 81-45-471-6122 korea microchip technology korea 168-1, youngbo bldg. 3 floor samsung-dong, kangnam-ku seoul, korea 135-882 tel: 82-2-554-7200 fax: 82-2-558-5934 singapore microchip technology singapore pte ltd. 200 middle road #07-02 prime centre singapore, 188980 tel: 65-6334-8870 fax: 65-6334-8850 ta iw a n microchip technology taiwan 11f-3, no. 207 tung hua north road taipei, 105, taiwan tel: 886-2-2717-7175 fax: 886-2-2545-0139 europe denmark microchip technology nordic aps regus business centre lautrup hoj 1-3 ballerup dk-2750 denmark tel: 45 4420 9895 fax: 45 4420 9910 france microchip technology sarl parc d?activite du moulin de massy 43 rue du saule trapu batiment a - ler etage 91300 massy, france tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany microchip technology gmbh gustav-heinemann ring 125 d-81739 munich, germany tel: 49-89-627-144 0 fax: 49-89-627-144-44 italy microchip technology srl centro direzionale colleoni palazzo taurus 1 v. le colleoni 1 20041 agrate brianza milan, italy tel: 39-039-65791-1 fax: 39-039-6899883 united kingdom arizona microchip technology ltd. 505 eskdale road winnersh triangle wokingham berkshire, england rg41 5tu tel: 44 118 921 5869 fax: 44-118 921-5820 03/01/02 *ds21706a* w orldwide s ales and s ervice

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